Growth of Vacuum Evaporated Ultraporous Silicon Studied with Spectroscopic Ellipsometry and Scanning Electron Microscopy
Published:Journal of Applied Physics 97, pp. 013511, 2005 by K. Kaminska, A. Amassian, L. Martinu and K. Robbie.
Abstract:Using a combination of variable-angle spectroscopic ellipsometry and scanning electron microscopy, we investigated the scaling behavior of uniaxially anisotropic, ultraporous silicon manufactured with glancing angle deposition. We found that both the diameter of the nanocolumns and the spacing between them increase with film thickness according to a power-law relationship consistent with self-affine fractal growth. An ellipsometric model is proposed to fit the optical properties of the anisotropic silicon films employing an effective medium approximation mixture of Tauc-Lorentz oscillator and void. This study shows that the optical response of silicon films made at glancing incidence differs significantly from that of amorphous silicon prepared by other methods due to highly oriented nanocolumn formation and power-law scaling.
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